Temperature-dependent refractive index measurements of wafer-shaped InAs and InSb.
نویسندگان
چکیده
An experimental method is introduced to measure the refractive index and its temperature dependence for wafer-shaped infrared materials over a continuous temperature range. Using a combination of Michelson interferometry, Fabry-Perot interferometry, and a temperature-controlled cryostat in a laser micrometer, refractive index values and their temperature coefficients can be measured for any specific temperature within a desired temperature range. Measurements are reported for InAs and InSb for a laser wavelength of 10.59 microm.
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عنوان ژورنال:
- Applied optics
دوره 47 2 شماره
صفحات -
تاریخ انتشار 2008